 |  |  | |
| PartNumber | SQM40010EL_GE3 | SQM40010EL-GE3 | SQM40014EM_GE3 |
| Description | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | MOSFET N-CH 40V 200A TO263-7 | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 1.21 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 230 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Tube | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 174 S | - | - |
| Fall Time | 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Unit Weight | 0.077603 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM40016EM_GE3 | MOSFET 40V Vds 20V Vgs D2PAK (TO-263-7L) | |
| SQM40010EL_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
| SQM40010EL-GE3 | ブランドニューオリジナル | ||
Vishay |
SQM40014EM_GE3 | MOSFET N-CH 40V 200A TO263-7 | |
| SQM40016EM_GE3 | MOSFET N-CHAN 40V |