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| PartNumber | STB36NM60N | STB36NM60ND |
| Description | MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS | MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097 |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V |
| Id Continuous Drain Current | 29 A | 29 A |
| Rds On Drain Source Resistance | 105 mOhms | 110 mOhms |
| Qg Gate Charge | 83.6 nC | 80.4 nC |
| Pd Power Dissipation | 210 W | 190 W |
| Configuration | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | MDmesh | - |
| Packaging | Reel | Reel |
| Series | STB36NM60N | STW36NM60N |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Vgs Gate Source Voltage | - | 25 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Fall Time | - | 61.8 ns |
| Rise Time | - | 53.4 ns |
| Typical Turn Off Delay Time | - | 111 ns |
| Typical Turn On Delay Time | - | 30 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
STMicroelectronics |
STB36NM60N | MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS | |
| STB36NM60ND | MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097 | ||
| STB36NM60ND | MOSFET N-CH 600V 29A D2PAK | ||
| STB36NM60N | MOSFET N-CH 600V 29A D2PAK | ||
| STB36NM60ND-CUT TAPE | ブランドニューオリジナル |