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| PartNumber | STGW25H120F2 | STGW25H120DF2 |
| Description | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247-3 | TO-247-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V |
| Collector Emitter Saturation Voltage | 2.1 V | 2.1 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 50 A | 50 A |
| Pd Power Dissipation | 375 W | 375 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | STGW25H120F2 | STGW25H120DF2 |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 25 A | 25 A |
| Brand | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | 250 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 600 | 600 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 1.340411 oz | 1.340411 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
STMicroelectronics |
STGW25H120F2 | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed | |
| STGW25H120DF2 | IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed | ||
| STGW25H120DF2 | IGBT Transistors IGBT & Power Bipola | ||
| STGW25H120F2 | IGBT H-SERIES 1200V 25A TO-247 | ||
| STGW25H120DF | ブランドニューオリジナル | ||
| STGW25H120F | ブランドニューオリジナル |