SUP500

SUP50010E-GE3 vs SUP50020EL-GE3 vs SUP50020E-GE3

 
PartNumberSUP50010E-GE3SUP50020EL-GE3SUP50020E-GE3
DescriptionMOSFET 60V Vds; 20V Vgs TO-220ABMOSFET 60V Vds 20V Vgs TO-220MOSFET N-CH 60V 120A TO220AB
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3TO-220AB-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current150 A120 A-
Rds On Drain Source Resistance2 mOhms2.3 mOhms-
Vgs th Gate Source Threshold Voltage2 V1.2 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge212 nC126 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min120 S145 S-
Fall Time13 ns11 ns-
Product TypeMOSFETMOSFET-
Rise Time112 ns20 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns55 ns-
Typical Turn On Delay Time28 ns15 ns-
Tradename-TrenchFET-
Height-15.49 mm-
Length-10.41 mm-
Series-SUP-
Width-4.7 mm-
Unit Weight-0.081130 oz-
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SUP50010E-GE3 MOSFET 60V Vds; 20V Vgs TO-220AB
SUP50020EL-GE3 MOSFET 60V Vds 20V Vgs TO-220
Vishay
Vishay
SUP50010E-GE3 MOSFET N-CHAN 60-V TO-220
SUP50020E-GE3 MOSFET N-CH 60V 120A TO220AB
SUP50020EL-GE3 MOSFET N-CH 60V 120A TO220AB
SUP50020E ブランドニューオリジナル
SUP50020EL ブランドニューオリジナル
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