 |  | | |
| PartNumber | TPW4R50ANH,L1Q | TPW4R508NH | TPW4R50ANH |
| Description | MOSFET N-CH Mosfet 60V N-CH Mosfet 100V | MOSFET POWER N-CH DSOP, RL of 5000 | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DSOP Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 92 A | - | - |
| Rds On Drain Source Resistance | 4.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 58 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 142 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.73 mm | - | - |
| Length | 5 mm | - | - |
| Series | TPW4R50ANH | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9.6 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 52 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Unit Weight | 0.003457 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Toshiba |
TPW4R50ANH,L1Q | MOSFET N-CH Mosfet 60V N-CH Mosfet 100V | |
| TPW4R50ANHL1QCT-ND | ブランドニューオリジナル | ||
| TPW4R50ANHL1QDKR-ND | ブランドニューオリジナル | ||
| TPW4R50ANHL1QTR-ND | ブランドニューオリジナル | ||
| TPW4R50ANH,L1Q | Darlington Transistors MOSFET N-CH Mosfet 60V | ||
| TPW4R508NH | ブランドニューオリジナル | ||
| TPW4R50ANH | MOSFET POWER N-CH DSOP, RL of 5000 | ||
| TPW4R50ANH,L1Q(M | Trans MOSFET N-CH 100V 92A 8-Pin DSOP (Alt: TPW4R50ANH,L1Q(M) | ||
| TPW4R50ANHL1Q | MOSFET POWER MOSFET TRANSISTOR |