 | | | |
| PartNumber | US6M2GTR | US6M2G3 TR | US6M2G3TR |
| Description | MOSFET 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TUMT-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V, 20 V | - | - |
| Id Continuous Drain Current | 1.5 A, 1 A | - | - |
| Rds On Drain Source Resistance | 170 mOhms, 280 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V, 2 V | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 1.6 nC, 2.1 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 6 ns, 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns, 8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns, 25 ns | - | - |
| Typical Turn On Delay Time | 7 ns, 9 ns | - | - |