 |  | | |
| PartNumber | VP0106N3-G | VP0106N2 | VP0106N3 |
| Description | MOSFET 60V 8Ohm | 450 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 | MOSFET 60V 8Ohm |
| Manufacturer | Microchip | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 250 mA | - | - |
| Rds On Drain Source Resistance | 8 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Bulk | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | FET | - | - |
| Width | 4.19 mm | - | - |
| Brand | Microchip Technology | - | - |
| Forward Transconductance Min | 150 mS | - | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8 ns | - | - |
| Typical Turn On Delay Time | 4 ns | - | - |
| Unit Weight | 0.016000 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Microchip Technology |
VP0106N3-G | MOSFET 60V 8Ohm | |
| VP0106N3-G P002 | MOSFET N-CH Enhancmnt Mode MOSFET | ||
| VP0106N2 | 450 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 | ||
| VP0106N3 | MOSFET 60V 8Ohm | ||
| VP0106N3-G | MOSFET P-CH 60V 0.25A TO92-3 | ||
| VP0106N6 | MOSFET Transistor, Array, P-Channel, DIP |