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| PartNumber | ZXMN10A08E6TA | ZXMN10A08DN8TA | ZXMN10A08E6TC |
| Description | MOSFET 100V N-Chnl UMOS | MOSFET 100V 2.1A N-Channel Enhancement MOSFET | MOSFET 100V N-Chnl UMOS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-26-6 | SO-8 | SOT-26-6 |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 1.9 A | 2.1 A | 1.9 A |
| Rds On Drain Source Resistance | 250 mOhms | 250 mOhms | 250 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 7.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.1 W | 1.8 W | 1.1 W |
| Configuration | Single | Dual | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.3 mm | 1.5 mm | 1.3 mm |
| Length | 3.1 mm | 5 mm | 3.1 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Series | ZXMN10A | ZXMN10 | ZXMN10 |
| Transistor Type | 1 N-Channel | 2 N-Channel | 1 N-Channel |
| Type | MOSFET | - | MOSFET |
| Width | 1.8 mm | 4 mm | 1.8 mm |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 2.2 ns | 2.2 ns | 2.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.2 ns | 2.2 ns | 2.2 ns |
| Factory Pack Quantity | 3000 | 500 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 8 ns | 8 ns | 8 ns |
| Typical Turn On Delay Time | 3.4 ns | 3.4 ns | 3.4 ns |
| Unit Weight | 0.000529 oz | 0.002610 oz | 0.000529 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN10A08E6TA | MOSFET 100V N-Chnl UMOS | |
| ZXMN10A08GTA | MOSFET 100V N-Channel 2A MOSFET | ||
| ZXMN10A08DN8TA | MOSFET 100V 2.1A N-Channel Enhancement MOSFET | ||
| ZXMN10A08E6TC | MOSFET 100V N-Chnl UMOS | ||
| ZXMN10A08 | ブランドニューオリジナル | ||
| ZXMN10A08DN8 | ブランドニューオリジナル | ||
| ZXMN10A08DN8TA | Trans MOSFET N-CH 100V 2.1A Automotive 8-Pin SOIC T/R | ||
| ZXMN10A08DN8TC | MOSFET 2N-CH 100V 1.6A 8SOIC | ||
| ZXMN10A08E6 | MOSFET N-CHANNEL 100V 1.9A SOT23-6, RL | ||
| ZXMN10A08E6QTA | Trans MOSFET N-CH 100V 1.9A Automotive 6-Pin SOT-26 T/R | ||
| ZXMN10A08E6T | ブランドニューオリジナル | ||
| ZXMN10A08E6TA | Trans MOSFET N-CH 100V 3.5A Automotive 6-Pin SOT-26 T/R | ||
| ZXMN10A08G | ブランドニューオリジナル | ||
| ZXMN10A08DN8TA-CUT TAPE | ブランドニューオリジナル | ||
| ZXMN10A08E6TA-CUT TAPE | ブランドニューオリジナル | ||
| ZXMN10A08E6TC-CUT TAPE | ブランドニューオリジナル | ||
| ZXMN10A08GTA-CUT TAPE | ブランドニューオリジナル | ||
| ZXMN10A08GTA | Darlington Transistors MOSFET 100V N-Channel 2A MOSFET | ||
| ZXMN10A08E6TC | MOSFET 100V N-Chnl UMOS |