CSD19506KCS

Mfr. #:: CSD19506KCS
説明:: Darlington Transistors MOSFET 80V N-CH Power MOSFET
ライフサイクル:: メーカー新製品
データシート:: CSD19506KCS データシート
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詳しくは:: CSD19506KCS 詳しくは CSD19506KCS Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CSD19506KCS

包装: チューブ

単位重量: 0.211644 oz

取り付けスタイル: スルーホール

商標名: NexFET

パッケージ-ケース: TO-220-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 375 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 10 ns

立ち上がり時間: 11 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 273 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 80 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 2.2 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 30 ns

典型的なターンオン遅延時間: 19 ns

Qg-Gate-Charge: 120 nC

フォワード-相互コンダクタンス-最小: 297 S

Tags: CSD19506, CSD1950, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19506KCS 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD19506KCS DISTI # 296-37169-5-ND	MOSFET N-CH 80V TO-220-3 RoHS: Compliant Min Qty: 1 Container: Tube	4315In Stock	1000:$2.5395 500:$3.0111 100:$3.7185 50:$4.0812 10:$4.5350 1:$5.0800
CSD19506KCS DISTI # CSD19506KCS	Trans MOSFET N-CH 80V 273A 3-Pin TO-220 Tube - Rail/Tube (Alt: CSD19506KCS) RoHS: Compliant Min Qty: 200 Container: Tube	Americas - 0	200:$2.2900 300:$2.1900 500:$2.1900 1000:$2.0900 2000:$1.9900
CSD19506KCS DISTI # 28X4988	TRANSISTOR, MOSFET, N CHANNEL, 80V, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	209	1:$4.3700 10:$3.9300 25:$3.6900 50:$3.4500 100:$3.2100 250:$3.0100 500:$2.7300
CSD19506KCS	80V, N-Channel NexFET&#153,Power MOSFET	4236	1000:$1.8700 750:$1.9100 500:$2.2100 250:$2.5400 100:$2.7200 25:$3.0300 10:$3.2500 1:$3.6100
CSD19506KCS DISTI # 595-CSD19506KCS	MOSFET 80V N-CH Power MOSFET RoHS: Compliant	491	1:$4.3700 10:$3.9300 100:$3.2100 250:$3.0100 500:$2.7300
CSD19506KCS DISTI # 8274903	MOSFET N-CHANNEL 80V 100A NEXFET TO-220, EA	130	1:£3.9500 50:£2.8600 100:£2.7900 250:£2.6400 500:£2.4000
CSD19506KCS DISTI # 8274903P	MOSFET N-CHANNEL 80V 100A NEXFET TO-220, TU	399	50:£2.8600 100:£2.7900 250:£2.6400 500:£2.4000

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