QPD1013SR

QPD1013SR
Mfr. #:
QPD1013SR
メーカー:
Qorvo
説明:
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
ライフサイクル:
メーカー新製品
データシート:
QPD1013SR データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
QPD1013SR 詳しくは
製品属性
属性値
メーカー:
カーボ
製品カテゴリ:
RFJFETトランジスタ
JBoss:
Y
トランジスタタイプ:
HEMT
テクノロジー:
GaN SiC
利得:
21.8 dB
トランジスタの極性:
Nチャネル
Id-連続ドレイン電流:
1.7 A
出力電力:
178 W
最大ドレインゲート電圧:
65 V
最低動作温度:
- 40 C
最高作動温度:
+ 85 C
Pd-消費電力:
67 W
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
DFN-6
包装:
リール
応用:
軍用レーダー、妨害装置、テスト計装、広帯域または狭帯域増幅器、陸上移動および軍用
構成:
シングルトリプルドレイン
動作周波数:
1.2 GHz to 2.7 GHz
ブランド:
カーボ
開発キット:
QPD1013EVB01
感湿性:
はい
製品タイプ:
RFJFETトランジスタ
ファクトリーパックの数量:
100
サブカテゴリ:
トランジスタ
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
GaN RF Transistor 2.7GHz 65V 150W 6-Pin QFN T/R
***el Electronic
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
QPD1013 GaN RF Transistor
Qorvo QPD1013 GaN RF Transistor is a high power and wide bandwidth High Electron Mobility Transistor (HEMT) which operates from DC to 2.7GHz. This single stage unmatched power transistor is a 150W discrete GaN on SiC device. The QPD1013 RF transistor features an over-molded plastic package and is suitable for numerous applications such as military radar, land mobile, and military radio communications.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
画像 モデル 説明
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OMO.#: OMO-QPD1015L-1152

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OMO.#: OMO-QPD1009-318

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可用性
ストック:
Available
注文中:
1993
数量を入力してください:
QPD1013SRの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$176.00
$176.00
25
$152.22
$3 805.50
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