OMO ElectronicOMO Electronic
Expand menu
0 ショッピングカート

IPB025N08N3 G

IPB025N08N3 G
Mfr. #:
IPB025N08N3 G
メーカー:
Infineon Technologies
説明:
Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
ライフサイクル:
メーカー新製品
データシート:
IPB025N08N3 G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPB025N08N3 G 詳しくは
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
OptiMOS 3
包装
リール
パーツエイリアス
IPB025N08N3GATMA1 IPB025N08N3GXT SP000311980
単位重量
0.139332 oz
取り付けスタイル
SMD / SMT
商標名
OptiMOS
パッケージ-ケース
TO-252-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
300 W
最高作動温度
+ 175 C
最低作動温度
- 55 C
立ち下がり時間
33 ns
立ち上がり時間
73 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
120 A
Vds-ドレイン-ソース-ブレークダウン-電圧
80 V
Rds-On-Drain-Source-Resistance
2.5 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
86 ns
典型的なターンオン遅延時間
28 ns
チャネルモード
強化
Tags
IPB025N08N3G, IPB025N0, IPB025, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
モデル メーカー 説明 ストック 価格
IPB025N08N3GATMA1
DISTI # V72:2272_06377516		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		491
  • 250:$3.3140
  • 100:$3.6820
  • 25:$4.3940
  • 10:$4.6929
  • 1:$5.4740
IPB025N08N3GATMA1
DISTI # V36:1790_06377516		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		7603In Stock
    • 500:$3.5581
    • 100:$4.3940
    • 10:$5.3590
    • 1:$6.0000
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		7603In Stock
    • 500:$3.5581
    • 100:$4.3940
    • 10:$5.3590
    • 1:$6.0000
    IPB025N08N3GATMA1
    DISTI # IPB025N08N3GATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		5000In Stock
    • 2000:$2.7677
    • 1000:$2.9134
    IPB025N08N3 G
    DISTI # 32731516    		Infineon Technologies AG01000
    • 200:$4.2840
    • 100:$4.6792
    • 50:$5.7120
    • 10:$5.7758
    • 4:$6.4260
    IPB025N08N3GATMA1
    DISTI # 31005994    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1000
    • 1000:$2.3063
    IPB025N08N3GATMA1
    DISTI # 32864934    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1000
    • 1000:$2.1709
    • 500:$2.2288
    • 250:$2.2899
    • 100:$2.3544
    • 50:$2.4226
    • 25:$2.4949
    • 5:$2.5717
    IPB025N08N3GATMA1
    DISTI # 30331029    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		491
    • 250:$3.5625
    • 100:$3.9581
    • 25:$4.7236
    • 10:$5.0449
    • 3:$5.8845
    IPB025N08N3GATMA1
    DISTI # SP000311980    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 2000
    • 1000:€2.4900
    • 2000:€2.3900
    • 4000:€2.2900
    • 6000:€2.1900
    • 10000:€1.9900
    IPB025N08N3 G
    DISTI # IPB025N08N3 G    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
    RoHS: Compliant
    Min Qty: 148
    Container: Bulk    		Americas - 0
    • 149:$2.3900
    • 151:$2.2900
    • 300:$2.1900
    • 745:$2.0900
    • 1490:$2.0900
    IPB025N08N3GXT
    DISTI # IPB025N08N3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$2.6900
    • 2000:$2.5900
    • 4000:$2.4900
    • 6000:$2.3900
    • 10000:$2.3900
    IPB025N08N3GATMA1
    DISTI # 60R2648    		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 500:$3.1400
    • 250:$3.5000
    • 100:$3.6900
    • 50:$3.8800
    • 25:$4.0600
    • 10:$4.2500
    • 1:$5.0000
    IPB025N08N3 G
    DISTI # 726-IPB025N08N3G    		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1428
    • 1:$5.0000
    • 10:$4.2500
    • 100:$3.6900
    • 250:$3.5000
    • 500:$3.1400
    • 1000:$2.6400
    • 2000:$2.5100
    IPB025N08N3 GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant    		2700
    • 1000:$2.2400
    • 500:$2.3600
    • 100:$2.4500
    • 25:$2.5600
    • 1:$2.7500
    IPB025N08N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		20
    • 1000:$2.2400
    • 500:$2.3600
    • 100:$2.4500
    • 25:$2.5600
    • 1:$2.7500
    IPB025N08N3GATMA1
    DISTI # 8986898P    		Infineon Technologies AGMOSFET N-CHANNEL 80V 120A TO263-3, RL258
    • 10:£1.9800
    IPB025N08N3GATMA1
    DISTI # 1775525    		Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
    RoHS: Compliant    		1424
    • 500:£2.4400
    • 250:£2.7200
    • 100:£2.8700
    • 10:£3.3000
    • 1:£4.3400
    IPB025N08N3GATMA1
    DISTI # 1775525    		Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
    RoHS: Compliant    		324
    • 2000:$3.7800
    • 1000:$3.9800
    • 500:$4.7300
    • 250:$5.2700
    • 100:$5.5600
    • 10:$6.4000
    • 1:$7.5400
    IPB025N08N3GATMA1
    DISTI # XSKDRABS0032304    		Infineon Technologies AG 
    RoHS: Compliant    		3000 in Stock0 on Order
    • 3000:$3.4440
    • 1000:$3.6960
    画像 モデル 説明
    IPB025N10N3 G

    Mfr.#: IPB025N10N3 G

    OMO.#: OMO-IPB025N10N3-G

    		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N10N3GATMA1

    Mfr.#: IPB025N10N3GATMA1

    OMO.#: OMO-IPB025N10N3GATMA1

    		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N08N3GATMA1

    Mfr.#: IPB025N08N3GATMA1

    OMO.#: OMO-IPB025N08N3GATMA1

    		 MOSFET MV POWER MOS
    IPB025N08N3 G

    Mfr.#: IPB025N08N3 G

    OMO.#: OMO-IPB025N08N3-G-1190

    		 Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
    IPB025N08N3G

    Mfr.#: IPB025N08N3G

    OMO.#: OMO-IPB025N08N3G-1190

    		 ブランドニューオリジナル
    IPB025N10N3 G

    Mfr.#: IPB025N10N3 G

    OMO.#: OMO-IPB025N10N3-G-1190

    		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
    IPB025N10N3G

    Mfr.#: IPB025N10N3G

    OMO.#: OMO-IPB025N10N3G-1190

    		 Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G)
    IPB025N10N3GATMA1

    Mfr.#: IPB025N10N3GATMA1

    OMO.#: OMO-IPB025N10N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 180A TO263-7
    IPB025N10N3GE8187ATMA1

    Mfr.#: IPB025N10N3GE8187ATMA1

    OMO.#: OMO-IPB025N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 180A TO263-7
    IPB025N10N3GE818XT

    Mfr.#: IPB025N10N3GE818XT

    OMO.#: OMO-IPB025N10N3GE818XT-317

    		 RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6
    可用性
    ストック:
    Available
    注文中:
    5500
    数量を入力してください:
    IPB025N08N3 Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $3.14
    $3.14
    10
    $2.98
    $29.78
    100
    $2.82
    $282.15
    500
    $2.66
    $1 332.40
    1000
    $2.51
    $2 508.00
    皮切りに
    最新の製品
    • Mid-Range+ System Basis Chip (SBC)
      Mid-Range+ System Basis Chip (SBC)
      Infineon’s Mid-Range+ SBC is an integrated circuit with combined power, communication, safety, and support features all in one device.
    • Compare IPB025N08N3 G
      Compare IPB025N08N3 G
      IPB025N08N3 vs IPB025N08N3G vs IPB025N08N3GATMA1
    • XDPL8221 Lighting Controller
      XDPL8221 Lighting Controller
      Infineon's XDPL8221 highly integrated digital AC/DC controller combines quasi-resonant PFC and quasi-resonant flyback controller with primary side regulation.
    • XC9140 Series DC/DC Converter
      XC9140 Series DC/DC Converter
      Torex's XC9140 series DC/DC converter used for high efficiency consumer applications like keyboards, Bluetooth, and household medical equipment.
    • XC9261 Series Step-Down DC/DC Converters
      XC9261 Series Step-Down DC/DC Converters
      Torex's 1.5 A synchronous step-down DC/DC converter with high speed transient response control feature that provides excellent load transient response.
    • µHVIC™ IRSxx752L Family
      µHVIC™ IRSxx752L Family
      Infineon Technologies' IRSxx752L are high-side, single-channel gate driver ICs with 600 V (IRS25752L), 200 V (IRS20752L), or 100 V (IRS10752L) blocking and level shifting capability.
    More Newest Products
    Top