CSD88539ND

Mfr. #:: CSD88539ND
説明:: MOSFET 2N-CH 60V 15A 8SOIC
ライフサイクル:: メーカー新製品
データシート:: CSD88539ND データシート
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詳しくは:: CSD88539ND 詳しくは CSD88539ND Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: FET-アレイ

シリーズ: NexFET

包装: Digi-ReelR代替パッケージ

単位重量: 0.019048 oz

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SOIC

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 2.1W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

入力-静電容量-Ciss-Vds: 741pF @ 30V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 15A

Rds-On-Max-Id-Vgs: 28 mOhm @ 5A, 10V

Vgs-th-Max-Id: 3.6V @ 250μA

ゲートチャージ-Qg-Vgs: 9.4nC @ 10V

Pd-電力損失: 2.1 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 4 ns

立ち上がり時間: 9 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 11.7 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 60 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 23 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 7.2 nC

フォワード-相互コンダクタンス-最小: 19 S

Tags: CSD8853, CSD885, CSD88, CSD8, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD88539ND 説明

***as Instruments: 60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150

***et Europe: Transistor MOSFET Array Dual N-CH 60V 15A 8-Pin SOIC T/R

***ark: Mosfet, Dual N Channel, 60V, 15A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

CSD88539ND 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD88539NDT DISTI # 296-37796-1-ND	MOSFET 2N-CH 60V 15A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7450In Stock	100:$0.8355 10:$1.0570 1:$1.1900
CSD88539NDT DISTI # 296-37796-6-ND	MOSFET 2N-CH 60V 15A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7450In Stock	100:$0.8355 10:$1.0570 1:$1.1900
CSD88539NDT DISTI # 296-37796-2-ND	MOSFET 2N-CH 60V 15A 8SOIC RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	7250In Stock	1250:$0.4966 750:$0.5496 500:$0.6291 250:$0.7119
CSD88539ND DISTI # 296-37304-1-ND	MOSFET 2N-CH 60V 15A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6807In Stock	1000:$0.4436 500:$0.5619 100:$0.7245 10:$0.9170 1:$1.0400
CSD88539ND DISTI # 296-37304-6-ND	MOSFET 2N-CH 60V 15A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6807In Stock	1000:$0.4436 500:$0.5619 100:$0.7245 10:$0.9170 1:$1.0400
CSD88539ND DISTI # 296-37304-2-ND	MOSFET 2N-CH 60V 15A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	12500:$0.3675 5000:$0.3818 2500:$0.4019
CSD88539NDT DISTI # CSD88539NDT	Trans MOSFET N-CH 60V 6.3A 8-Pin SOIC T/R (Alt: CSD88539NDT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 250	250:€0.6019 500:€0.4919 1000:€0.4509 1500:€0.3869 2500:€0.3609
CSD88539ND DISTI # CSD88539ND	Trans MOSFET N-CH 60V 15A 8-Pin SOIC T/R (Alt: CSD88539ND) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD88539ND DISTI # CSD88539ND	Trans MOSFET N-CH 60V 15A 8-Pin SOIC T/R - Tape and Reel (Alt: CSD88539ND) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3779 5000:$0.3599 10000:$0.3479 15000:$0.3359 25000:$0.3269
CSD88539ND DISTI # CSD88539ND	Trans MOSFET N-CH 60V 15A 8-Pin SOIC T/R (Alt: CSD88539ND) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5219 5000:€0.4269 10000:€0.3909 15000:€0.3349 25000:€0.3129
CSD88539NDT DISTI # CSD88539NDT	Trans MOSFET N-CH 60V 6.3A 8-Pin SOIC T/R - Tape and Reel (Alt: CSD88539NDT) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.4359 1500:$0.4149 2500:$0.4009 5000:$0.3879 10000:$0.3769
CSD88539ND DISTI # 55X2694	MOSFET Transistor, Dual N Channel, 15 A, 60 V, 0.023 ohm, 10 V, 3 V RoHS Compliant: Yes	3711	1:$0.8600 10:$0.7300 100:$0.5620 500:$0.4960 1000:$0.3920
CSD88539ND	60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND	3729	1000:$0.3000 750:$0.3300 500:$0.4200 250:$0.5100 100:$0.5500 25:$0.6500 10:$0.7000 1:$0.7800
CSD88539NDT	60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND	3730	1000:$0.3400 750:$0.3800 500:$0.4800 250:$0.5900 100:$0.6400 25:$0.7400 10:$0.8000 1:$0.9000
CSD88539ND DISTI # 595-CSD88539ND	MOSFET 60-V Dual N-Channel Power MOSFET RoHS: Compliant	34066	1:$0.8600 10:$0.7300 100:$0.5620 500:$0.4960 1000:$0.3920 2500:$0.3480 10000:$0.3350 22500:$0.3240
CSD88539NDT DISTI # 595-CSD88539NDT	MOSFET 60V Dual NCh NexFET Pwr MOSFET RoHS: Compliant	1851	1:$0.9900 10:$0.8400 100:$0.6480 250:$0.6480 500:$0.5720 1000:$0.4520 2500:$0.4010 10000:$0.3860
CSD88539ND	Small Signal Field-Effect Transistor RoHS: Compliant	4224	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200
CSD88539NDT DISTI # CSD88539NDT	Transistor: N-MOSFET x2,unipolar,60V,15A,2.1W,SO8	245	1:$0.8400 3:$0.7600
CSD88539ND DISTI # 2422576	MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC RoHS: Compliant	15316	5:£0.6250 25:£0.5630 100:£0.4290 250:£0.4040 500:£0.3780
CSD88539ND DISTI # 2422576	MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC RoHS: Compliant	3711	1:$1.3700 10:$1.1600 100:$0.8900
CSD88539NDT DISTI # 2430180	MOSFET, DUAL N-CH, 60V, 15A, SOIC-8 RoHS: Compliant	0	1:$1.5700 10:$1.3400 100:$1.0300 250:$1.0300 500:$0.9060 1000:$0.7160
CSD88539NDT DISTI # 2430180RL	MOSFET, DUAL N-CH, 60V, 15A, SOIC-8 RoHS: Compliant	0	1:$1.5700 10:$1.3400 100:$1.0300 250:$1.0300 500:$0.9060 1000:$0.7160

画像	モデル	説明
	Mfr.#: CSD88599Q5DC OMO.#: OMO-CSD88599Q5DC	MOSFET 60V, Nch synchronous buck NexFET MOSFETG , SON5x6 dualCool PowerBlock, 40A 22-VSON-CLIP -55 to 150
	Mfr.#: CSD88537NDT OMO.#: OMO-CSD88537NDT	MOSFET 60V Dual NCh NexFET Pwr MOSFET
	Mfr.#: CSD88539NDT OMO.#: OMO-CSD88539NDT	MOSFET 60V Dual NCh NexFET Pwr MOSFET
	Mfr.#: CSD88357ND OMO.#: OMO-CSD88357ND-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD88599Q5DCT OMO.#: OMO-CSD88599Q5DCT-TEXAS-INSTRUMENTS	MOSFET 2 N-CH 60V 22-VSON-CLIP
	Mfr.#: CSD88584Q5DCT OMO.#: OMO-CSD88584Q5DCT-TEXAS-INSTRUMENTS	MOSFET 2 N-CH 40V 22-VSON-CLIP
	Mfr.#: CSD88537NDT OMO.#: OMO-CSD88537NDT-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET 60V Dual NCh NexFET Pwr MOSFET
	Mfr.#: CSD88539ND OMO.#: OMO-CSD88539ND-TEXAS-INSTRUMENTS	MOSFET 2N-CH 60V 15A 8SOIC
	Mfr.#: CSD88584Q5DC OMO.#: OMO-CSD88584Q5DC-TEXAS-INSTRUMENTS	40V POWERBLOCK N CH MOSFET
	Mfr.#: CSD88599Q5DC OMO.#: OMO-CSD88599Q5DC-TEXAS-INSTRUMENTS	MOSFET 2 N-CH 60V 22-VSON-CLIP

CSD88539ND

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes