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BSP2

BSP297H6327XTSA1 vs BSP297L6327HTSA1 vs BSP298 E6327

 
PartNumberBSP297H6327XTSA1BSP297L6327HTSA1BSP298 E6327
DescriptionMOSFET N-Ch 200V 660mA SOT-223-3MOSFET N-CH 200V 660MA SOT-223MOSFET N-CH 400V 500MA SOT-223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePG-SOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current660 mA--
Rds On Drain Source Resistance1.8 Ohms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge12.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
SeriesBSP297--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min470 mS--
Fall Time19 ns--
Product TypeMOSFET--
Rise Time3.8 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time49 ns--
Typical Turn On Delay Time5.2 ns--
Part # AliasesBSP297 H6327 SP001058622--
Unit Weight0.003951 oz--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies 		BSP297H6327XTSA1 MOSFET N-Ch 200V 660mA SOT-223-3
BSP298H6327XUSA1 MOSFET N-Ch 400V 500mA SOT-223-3
BSP299 H6327 MOSFET N-Ch 500V 400mA SOT-223-3
BSP299H6327XUSA1 MOSFET N-Ch 500V 400mA SOT-223-3
BSP297H6327XTSA1 MOSFET N-CH 200V 660MA SOT-223
BSP297L6327HTSA1 MOSFET N-CH 200V 660MA SOT-223
BSP298 E6327 MOSFET N-CH 400V 500MA SOT-223
BSP298H6327XUSA1 MOSFET N-CH 400V 500MA SOT-223
BSP298L6327HUSA1 MOSFET N-CH 400V 500MA SOT-223
BSP299L6327HUSA1 MOSFET N-CH 500V 400MA SOT-223
BSP299 E6327 MOSFET N-CH 500V 400MA SOT-223
BSP299H6327XUSA1 IGBT Transistors MOSFET N-Ch 500V 400mA SOT-223-3
BSP298 H6327 N-CH MOS-FET 0,5A 400V SOT223
BSP299L3627 ブランドニューオリジナル
BSP299E6433 INSTOCK
BSP299H6327 500V,4,0.4A,N-Ch Small-Signal MOSFET
BSP297H6327 200V,0.66A,N-Ch Small-Signal MOSFET
BSP297H6327XTSA1/SN ブランドニューオリジナル
BSP297L6327 Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP297L6327XT ブランドニューオリジナル
BSP298 MOSFET, N CHANNEL, 400V, 500mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:500mA, Drain Source Voltage Vds:400V, On Resistance Rds(on):2.2ohm, Rds(on) Test Voltage Vgs:10
BSP298 L6327 MOSFET N-Ch 400V 500mA SOT-223-3
BSP298E-6327 ブランドニューオリジナル
BSP298E6327 0.45 A, 400 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
BSP298H6327 400V,0.5A,N-channel Power Transisto
BSP298L6327 POWER FIELD-EFFECT TRANSISTOR, 0.5A I(D), 400V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSP299 N CHANNEL MOSFET, 500V, 400mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:400mA, Drain Source Voltage Vds:500V, On Resistance Rds(on):4ohm, Rds(on) Test Voltage Vgs:10V,
BSP299 H6327 Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R
BSP299-L6327 ブランドニューオリジナル
BSP299E6327 ブランドニューオリジナル
BSP299L6327 Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP299L6327XT ブランドニューオリジナル
BSP29G ブランドニューオリジナル
BSP2T1 ブランドニューオリジナル
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