| PartNumber | BSZ0909NDXTMA1 | BSZ0909NS | BSZ0909NSATMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 30V 36A TDSON-8 OptiMOS | MOSFET N-CH 34V 9A 8TSDSON |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | BSZ0909ND SP001637282 | BSZ0909NSATMA1 BSZ99NSXT SP000832568 | - |
| Unit Weight | 0.000811 oz | 0.010582 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TSDSON-8 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 34 V | - |
| Id Continuous Drain Current | - | 36 A | - |
| Rds On Drain Source Resistance | - | 12 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 6.1 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 25 W | - |
| Configuration | - | Single | - |
| Height | - | 1.1 mm | - |
| Length | - | 3.3 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 3.3 mm | - |
| Fall Time | - | 2 ns | - |
| Rise Time | - | 2.2 ns | - |
| Typical Turn Off Delay Time | - | 16 nS | - |