| PartNumber | DMN6140L-13 | DMN6140L-7 | DMN6140LQ-13 |
| Description | MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A | MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 2.3 A | 2.3 A | - |
| Rds On Drain Source Resistance | 140 mOhms | 140 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 8.6 nC | 8.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.3 W | 1.3 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Series | DMN614 | DMN614 | DMN6140 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 2.7 ns | 2.7 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.6 ns | 3.6 ns | - |
| Factory Pack Quantity | 10000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16.3 ns | 16.3 ns | - |
| Typical Turn On Delay Time | 2.6 ns | 2.6 ns | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Qualification | - | - | AEC-Q101 |