DMN61D9UW

DMN61D9UWQ-13 vs DMN61D9UW-7 vs DMN61D9UW-13

 
PartNumberDMN61D9UWQ-13DMN61D9UW-7DMN61D9UW-13
DescriptionMOSFET MOSFET BVDSS: 41V-60VMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2AMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current340 mA340 mA-
Rds On Drain Source Resistance1.2 Ohms1.2 Ohms-
Vgs th Gate Source Threshold Voltage500 mV500 mV-
Vgs Gate Source Voltage5 V20 V-
Qg Gate Charge400 pC400 pC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation440 mW440 mW-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min200 mS200 mS-
Fall Time8.4 ns8.4 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time1.8 ns1.8 ns-
Factory Pack Quantity10000300010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14.4 ns14.4 ns-
Typical Turn On Delay Time2.1 ns2.1 ns-
Mounting Style-SMD/SMTSMD/SMT
Package / Case-SOT-323-3SOT-323-3
Series-DMN61D9UDMN61D9U
Unit Weight-0.000176 oz0.000176 oz
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMN61D9UWQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMN61D9UWQ-7 MOSFET MOSFET BVDSS: 41V-60V
DMN61D9UW-7 MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
DMN61D9UW-13 MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
DMN61D9UW-7 N-CHANNEL ENHANCEMENT MODE MOSFET
Top