IXTY02N

IXTY02N120P-TRL vs IXTY02N50D vs IXTY02N120P

 
PartNumberIXTY02N120P-TRLIXTY02N50DIXTY02N120P
DescriptionDiscrete Semiconductor Modules Polar Power MOSFETMOSFET 0.2 Amps 500V 30 RdsMOSFET 0.2Amps 1200V
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETMOSFET
RoHSYYY
ProductPower MOSFET ModulesMOSFET Small Signal-
TypePolar--
Vgs Gate Source Voltage20 V20 V20 V
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
PackagingReelTubeTube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-ChannelN-ChannelN-Channel
Fall Time39 ns4 ns-
Id Continuous Drain Current0.2 A200 mA200 mA
Pd Power Dissipation33 W1.1 W33 W
Product TypeDiscrete Semiconductor ModulesMOSFETMOSFET
Rds On Drain Source Resistance75 Ohms30 Ohms75 Ohms
Rise Time10 ns4 ns-
Factory Pack Quantity25007070
SubcategoryDiscrete Semiconductor ModulesMOSFETsMOSFETs
TradenamePolar--
Typical Turn Off Delay Time21 ns28 ns-
Typical Turn On Delay Time6 ns9 ns-
Vds Drain Source Breakdown Voltage1200 V500 V1.2 kV
Vgs th Gate Source Threshold Voltage2 V--
Technology-SiSi
Number of Channels-1 Channel1 Channel
Qg Gate Charge---
Channel Mode-Depletion-
Height-2.38 mm-
Length-6.73 mm-
Series-IXTY02N50IXTY02N120
Transistor Type-1 N-Channel1 N-Channel
Width-6.22 mm-
Forward Transconductance Min---
Development Kit---
Unit Weight-0.081130 oz0.081130 oz
メーカー モデル 説明 RFQ
Littelfuse
Littelfuse
IXTY02N120P-TRL Discrete Semiconductor Modules Polar Power MOSFET
IXTY02N50D MOSFET 0.2 Amps 500V 30 Rds
IXTY02N50D_TRL MOSFET 0.2 A 500V 30 Rds
IXTY02N120P MOSFET 0.2Amps 1200V
IXTY02N50D_TRL MOSFET 0.2 A 500V 30 Rds
IXTY02N50D IGBT Transistors MOSFET 0.2 Amps 500V 30 Rds
IXTY02N120P MOSFET 0.2Amps 1200V
IXTY02N50 ブランドニューオリジナル
IXTY02N120P TRL ブランドニューオリジナル
IXTY02N50D TRL MOSFET N-CH
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