 | | | |
| PartNumber | SQJ204EP-T1_GE3 | SQJ202EP-T1_GE3 | SQJ200EP-T1_GE3 |
| Description | MOSFET 12V Vds -/+12V Vgs PowerPAK SO-8L | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V | 20 V |
| Id Continuous Drain Current | 20 A, 60 A | 20 A, 60 A | 20 A, 60 A |
| Rds On Drain Source Resistance | 3 mOhms, 8.3 mOhms | 5.2 mOhms, 2.5 mOhms | 7.4 mOhms, 3.1 mOhms |
| Vgs th Gate Source Threshold Voltage | 500 mV | 1 V | 1 V |
| Vgs Gate Source Voltage | 12 V | 20 V | 20 V |
| Qg Gate Charge | 20 nC, 50 nC | 22 nC, 54 nC | 18 nC, 43 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 27 W, 48 W | 27 W, 48 W | 27 W, 48 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 38 S, 66 S | 49 S, 91 S | 55 S, 60 S |
| Fall Time | 5 ns | 2.6 ns, 5 ns | 13 ns, 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns, 27 ns | 3.2 ns, 4.5 ns | 18 ns, 17 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 22 ns, 34 ns | 20 ns, 28 ns | 13 ns, 19 ns |
| Typical Turn On Delay Time | 10 ns, 17 ns | 8.8 ns, 10.7 ns | 4 ns, 7 ns |
| Qualification | - | AEC-Q101 | AEC-Q101 |
| Tradename | - | TrenchFET | TrenchFET |
| Transistor Type | - | 2 N-Channel | 2 N-Channel |
| Unit Weight | - | 0.017870 oz | 0.017870 oz |
| Height | - | - | 1.04 mm |
| Length | - | - | 6.15 mm |
| Width | - | - | 5.13 mm |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ208EP-T1_GE3 | MOSFET Dual Nch 40V Vds PowerPAK SO-8L | |
| SQJ204EP-T1_GE3 | MOSFET 12V Vds -/+12V Vgs PowerPAK SO-8L | ||
| SQJ244EP-T1_GE3 | MOSFET 40V Vds -/+20V Vgs PowerPAK SO-8L | ||
| SQJ202EP-T1_GE3 | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | ||
| SQJ200EP-T1_GE3 | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | ||
| SQJ200EP | ブランドニューオリジナル | ||
| SQJ200ZP-GZ3 | ブランドニューオリジナル | ||
| SQJ202EP | ブランドニューオリジナル | ||
Vishay |
SQJ200EP-T1_GE3 | MOSFET 2N-CH 20V 20A/60A PPAK SO | |
| SQJ202EP-T1_GE3 | MOSFET 2N-CH 12V 20A/60A PPAK SO | ||
| SQJ260EP-T1_GE3 | MOSFET 2 N-CH 60V POWERPAK SO8 |