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| PartNumber | SQJ200EP-T1_GE3 | SQJ200EP | SQJ200ZP-GZ3 |
| Description | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | ||
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8L-4 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel NPN | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 20 A, 60 A | - | - |
| Rds On Drain Source Resistance | 7.4 mOhms, 3.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18 nC, 43 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 27 W, 48 W | - | - |
| Configuration | Dual | 2 N-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SQ | Automotive, AEC-Q101, TrenchFETR | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 5.13 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 55 S, 60 S | - | - |
| Fall Time | 13 ns, 14 ns | 13 ns 14 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns, 17 ns | 18 ns 17 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns, 19 ns | 13 ns 19 ns | - |
| Typical Turn On Delay Time | 4 ns, 7 ns | 4 ns 7 ns | - |
| Unit Weight | 0.017870 oz | - | - |
| Package Case | - | PowerPAKR SO-8 Dual | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR SO-8 Dual Asymmetric | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 27W, 48W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 975pF @ 10V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 20A, 60A | - |
| Rds On Max Id Vgs | - | 8.8 mOhm @ 16A, 10V | - |
| Vgs th Max Id | - | 2V @ 250μA | - |
| Gate Charge Qg Vgs | - | 18nC @ 10V | - |
| Pd Power Dissipation | - | 27 W 48 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V +/- 20 V | - |
| Id Continuous Drain Current | - | 20 A 60 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V 1 V | - |
| Rds On Drain Source Resistance | - | 12.4 mOhms 6.3 mOhms | - |
| Qg Gate Charge | - | 12 nC 29 nC | - |
| Forward Transconductance Min | - | 55 S 60 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ200EP-T1_GE3 | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | |
| SQJ200EP | ブランドニューオリジナル | ||
| SQJ200ZP-GZ3 | ブランドニューオリジナル | ||
Vishay |
SQJ200EP-T1_GE3 | MOSFET 2N-CH 20V 20A/60A PPAK SO |