VP0106N3

VP0106N3-G vs VP0106N3-G P002 vs VP0106N3

 
PartNumberVP0106N3-GVP0106N3-G P002VP0106N3
DescriptionMOSFET 60V 8OhmMOSFET N-CH Enhancmnt Mode MOSFETMOSFET 60V 8Ohm
ManufacturerMicrochipMicrochip-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current250 mA250 mA-
Rds On Drain Source Resistance8 Ohms15 Ohms-
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkReel-
Height5.33 mm--
Length5.21 mm--
Transistor Type1 P-Channel1 P-Channel-
TypeFET--
Width4.19 mm--
BrandMicrochip TechnologyMicrochip Technology-
Forward Transconductance Min150 mS--
Fall Time4 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time5 ns3 ns-
Factory Pack Quantity10002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time8 ns8 ns-
Typical Turn On Delay Time4 ns4 ns-
Unit Weight0.016000 oz0.016000 oz-
Product-MOSFET Small Signal-
メーカー モデル 説明 RFQ
Microchip Technology
Microchip Technology
VP0106N3-G MOSFET 60V 8Ohm
VP0106N3-G P002 MOSFET N-CH Enhancmnt Mode MOSFET
VP0106N3 MOSFET 60V 8Ohm
VP0106N3-G MOSFET P-CH 60V 0.25A TO92-3
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